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Influence of Barrier Doping and Barrier Composition on Optical Gain in (In, Ga)N MQWs
Author(s) -
Vehse M.,
Michler P.,
Gutowski J.,
Figge S.,
Hommel S.,
Selke H.,
Ryder P.L.,
Keller S.,
DenBaars S.P.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<331::aid-pssb331>3.0.co;2-7
Subject(s) - doping , recombination , rectangular potential barrier , quantum well , materials science , spectral line , activation barrier , condensed matter physics , optoelectronics , physics , chemistry , optics , density functional theory , quantum mechanics , laser , biochemistry , gene
The influence of barrier doping and barrier composition on the optical gain in (In, Ga)N multiple quantum wells is studied under stationary conditions. Systematic temperature dependent gain measurements are performed by means of the variable‐stripe‐length method. Furthermore, PL spectra are recorded in order to study the temperature dependence of the quantum efficiency which gives information on activation processes to nonradiative recombination channels. The measured threshold densities and gain can successfully be explained by consideration of localization effects.