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Photoluminescence Dynamics of InGaN/GaN Quantum Wells with Different In Concentrations
Author(s) -
Klose M.,
Korona K.P.,
Kuhl J.,
Heuken M.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<325::aid-pssb325>3.0.co;2-w
Subject(s) - photoluminescence , excitation , quantum well , recombination , amplitude , activation energy , thermal , materials science , condensed matter physics , dynamics (music) , atomic physics , physics , chemistry , optoelectronics , optics , thermodynamics , quantum mechanics , laser , biochemistry , acoustics , gene
The photoluminescence (PL) dynamics of InGaN/GaN quantum wells with different In concentrations x In have been measured. The PL emission forms a broad band consisting of two parts with dramatically different dynamics. The high energy part (QW H ) is present only under higher excitation densities (>10 3 W/cm 2 ), it has fast decay (of a few tens of ps) and changes only slightly with temperature. Its relative amplitude and the PL lifetime τ increase with the x In . The second, low energy part (QW L ) has slow decay (of the order of 10 ns), its amplitude saturates under higher excitation densities and quickly vanishes when the temperature increases. At 10 K the QW L lifetimes change from τ = 1.8 ± 0.2 ns ( x In = 0.11) up to 20 ± 4 ns ( x In = 0.4) while the thermal activation energy ( E a = 18 ± 3 meV) is not sensitive for the In concentration. We propose that QW H and QW L come from nonlocalised and localised carrier recombination, respectively.