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Effect of an Electric Field on the Electroluminescence and the Photocurrent in InGaN Single Quantum Well Light Emitting Diodes
Author(s) -
de Mierry P.,
Dalmasso S.,
Beaumont B.,
Gibart P.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<321::aid-pssb321>3.0.co;2-b
Subject(s) - electroluminescence , quantum confined stark effect , optoelectronics , photocurrent , electric field , light emitting diode , blueshift , diode , materials science , stark effect , biasing , piezoelectricity , quantum well , voltage , physics , optics , layer (electronics) , photoluminescence , nanotechnology , laser , quantum mechanics , composite material
Abstract The electroluminescence (EL) and photocurrent (PC) under reverse bias voltage were investigated on a commercial blue InGaN SQW light emitting diode (LED) manufactured by Nichia Chemical Industries. The results show that large piezoelectric fields are present in the active InGaN layer. This field was modulated by application of reverse voltages in the p/n junction. The blueshift of the rising edge of the PC spectra with increasing reverse bias is related to the cancellation of the PE field in the well. The EL and PC are found to be strongly dominated by the quantum confined Stark effect (QCSE).