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Enhanced Blue‐Light Emission from InGaN/GaN Quantum Wells Grown over Multilayered Buffer on Silicon Substrate by Metal Organic Chemical Vapor Deposition
Author(s) -
Zhang Xiong,
Chua SooJin,
Liu Wei,
Li Peng
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<307::aid-pssb307>3.0.co;2-w
Subject(s) - chemical vapor deposition , materials science , photoluminescence , quantum well , optoelectronics , substrate (aquarium) , silicon , metalorganic vapour phase epitaxy , metal , epitaxy , layer (electronics) , nanotechnology , optics , metallurgy , laser , oceanography , physics , geology
InGaN/GaN multiple quantum wells have been grown on silicon‐(001) substrate with specially designed composite intermediate layers with single or double GaN/Al x Ga 1— x N ( x = 0.2) multilayered buffers by metal‐organic chemical vapor deposition and characterized by photoluminescence spectroscopy. It was found that InGaN/GaN multiple quantum wells grown on composite intermediate layers with double multilayered buffers gave narrower and enhanced InGaN quantum well‐related excitonic emission, and suppressed GaN band‐edge‐related emission as compared with those samples grown over single multilayered buffer under identical reactor configuration and growth conditions. This fact indicates that by using the proposed composite intermediate layers with double multilayered buffers, the crystalline quality of the InGaN/GaN multiple quantum wells grown on a silicon substrate can be significantly improved.