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Comparison of Optical Properties between GaN and InGaN Quantum Wells
Author(s) -
Riblet P.,
Hirayama H.,
Kinoshita A.,
Hirata A.,
Sugano T.,
Aoyagi Y.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<287::aid-pssb287>3.0.co;2-4
Subject(s) - photoluminescence , quantum well , materials science , quantum , optoelectronics , quantum dot , quantum point contact , condensed matter physics , physics , optics , quantum mechanics , laser
We report on the experimental determination of the photoluminescence mechanism in a set of In 0.25 Ga 0.75 N quantum wells. Instead of studying the photoluminescence for different In contents, we have investigated it as a function of the quantum well width in combination with a similar study performed on GaN quantum wells. In this way we show that the photoluminescence is not coming from quantum dots in the quantum well but from the quantum well itself under the influence of an internal electric field induced by strain.