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Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells
Author(s) -
Keller S.,
Fleischer S.B.,
Chichibu S.F.,
Bowers J.E.,
Mishra U.K.,
DenBaars S.P.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<269::aid-pssb269>3.0.co;2-4
Subject(s) - superlattice , luminescence , photoluminescence , materials science , optoelectronics , quantum dot , cladding (metalworking) , picosecond , metalorganic vapour phase epitaxy , quantum well , layer (electronics) , carrier lifetime , nanotechnology , optics , laser , epitaxy , physics , silicon , metallurgy
The effect of different confinement layers on the luminescence of InGaN single quantum well structures grown by MOCVD was studied. The brightest photoluminescence was observed for samples with superlattice (SL) confinement layers with internal quantum efficiencies reaching 90%. Picosecond carrier transport and capture investigations using wavelength dependent pump–probe measurements indicated that the enhanced luminescence efficiency of the samples with SL cladding layers is caused by the capture of carriers from the SL confinement region. The “funneling” effect is discussed with respect to the confinement layer design in the individual structures and the carrier lifetime.