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Photoluminescence and Gain of MBE Grown Cubic In x Ga 1—x N/GaN Heterostructures
Author(s) -
Frey T.,
As D.J.,
Schikora D.,
Lischka K.,
Holst J.,
Hoffmann A.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<259::aid-pssb259>3.0.co;2-8
Subject(s) - photoluminescence , reciprocal lattice , heterojunction , materials science , molecular beam epitaxy , phase (matter) , full width at half maximum , diffraction , epitaxy , optoelectronics , crystallography , optics , chemistry , physics , nanotechnology , layer (electronics) , organic chemistry
We report on the molecular beam epitaxy of cubic In x Ga 1— x N/GaN heterostructures with different In contents. High resolution X‐ray diffraction (HRXRD) measurements gave the In content in the layers. Reciprocal space mapping of the symmetrical (002) and asymmetrical (113) reflection reveal that cubic In x Ga 1— x N with low In content ( x < 0.2) is single phase whereas layers with higher In content show evidence of phase separation. The photoluminescence (PL) of the In x Ga 1— x N layers was measured at 2 K. The full width at half maximum of the PL is as low as 200 meV for single phase layers whereas the emission is significantly broadened for phase separated In x Ga 1— x N. Optical gain measurements revealed a maximum gain of about 70 cm —1 from In x Ga 1— x N ( x = 0.07) and a decrease of the gain with increasing In content.