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Optical Study of Cubic Gallium Nitride Band‐Edge and Relation with Residual Strain
Author(s) -
Philippe A.,
BruChevallier C.,
GamezCuatzin H.,
Guillot G.,
MartinezGuerrero E.,
Feuillet G.,
Daudin B.,
AboughéNzé P.,
Monteil Y.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<247::aid-pssb247>3.0.co;2-k
Subject(s) - exciton , materials science , condensed matter physics , valence (chemistry) , valence band , gallium , gallium nitride , band gap , molecular physics , chemistry , layer (electronics) , physics , nanotechnology , organic chemistry , metallurgy
A photoreflectance study of excitonic transitions in cubic GaN grown on cubic SiC pseudo‐substrates is reported. The determination of the temperature dependence of the two exciton energies is allowed by the rather low transition widths. Comparison of the two PR transition energies and widths with theoretical calculation as a function of biaxial strain indicates that the lowest PR excitonic transition is composed of both contributions of light hole and heavy hole valence band related excitons. The width of this transition is increasing as the residual strain in the layer increases the splitting between light and heavy hole valence bands.