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Photoluminescence Excitation Spectrum Study on GaN/Al 0.15 Ga 0.85 N MQWs
Author(s) -
Nishida T.,
Kumagai M.,
Ando H.,
Kobayashi N.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<233::aid-pssb233>3.0.co;2-3
Subject(s) - photoluminescence , materials science , excited state , nitride , photoluminescence excitation , quantum well , optoelectronics , excitation , substrate (aquarium) , epitaxy , gallium nitride , absorption (acoustics) , ground state , vapor phase , atomic physics , optics , physics , nanotechnology , composite material , laser , oceanography , layer (electronics) , quantum mechanics , geology , thermodynamics
To clarify the subband profile of nitride quantum structures, we performed photoluminescence excitation spectrum measurements of GaN/Al 0.15 Ga 0.85 N multiquantum well structures grown by metalorganic vapor phase epitaxy on an on‐axis 6H‐SiC(0001) Si substrate. Clear absorption due to the ground state is confirmed. Further, two types of absorption related to the excited states of the nitride quantum wells are found.