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A Comparison of the Optical Characteristics of AlGaN, GaN, and InGaN Thin Films
Author(s) -
Cho YongHoon,
Schmidt T.J.,
Gainer G.H.,
Lam J.B.,
Song J.J.,
Keller S.,
Mishra U.K.,
DenBaars S.P.,
Yang W.,
Kim D.S.,
Jhe W.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<227::aid-pssb227>3.0.co;2-s
Subject(s) - materials science , photoluminescence , optoelectronics , indium , excited state , wide bandgap semiconductor , excitation , redshift , alloy , gallium nitride , absorption (acoustics) , spectroscopy , layer (electronics) , atomic physics , nanotechnology , physics , quantum mechanics , galaxy , composite material
We have investigated the optical properties of InGaN, GaN, and AlGaN epilayers using photoluminescence (PL), PL excitation, time‐resolved PL, and optically pumped stimulated emission (SE) spectroscopy. The InGaN layers had a larger (i) Stokes shift, (ii) spectral broadening, (iii) decay time, and (iv) PL redshift with time than AlGaN layers of comparable alloy composition. The optically pumped SE behavior of InGaN layers is significantly different than that of GaN and AlGaN layers. This is attributed to the suppression of nonradiative recombination and the elimination of below‐gap induced absorption in highly excited InGaN alloys, effects that accompany the incorporation of indium into GaN. In contrast, the SE behavior of AlGaN layers is similar to that of highly excited GaN.