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Optical Characterization of Cubic AlGaN Epilayers by Cathodoluminescence and Spectroscopic Ellipsometry
Author(s) -
Okumura H.,
Koizumi T.,
Ishida Y.,
Yaguchi H.,
Yoshida S.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<211::aid-pssb211>3.0.co;2-j
Subject(s) - cathodoluminescence , materials science , molecular beam epitaxy , characterization (materials science) , ellipsometry , band gap , epitaxy , optoelectronics , analytical chemistry (journal) , thin film , nanotechnology , luminescence , chemistry , layer (electronics) , chromatography
Cubic AlGaN epilayers grown by molecular beam epitaxy were characterized by cathodoluminescence and spectroscopic ellipsometry techniques. The linear increase of the bandgap energy versus Al composition was consistently confirmed by the two techniques, which indicate the direct transition nature of cubic AlGaN band structure. The energy dependence of optical constants for cubic GaN was also obtained by the simulation of the measured allipsometric data.