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Exciton Energy Structure in Wurtzite GaN
Author(s) -
Rodina A.V.,
Dietrich M.,
Göldner A.,
Eckey L.,
Efros Al.L.,
Rosen M.,
Hoffmann A.,
Meyer B.K.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<21::aid-pssb21>3.0.co;2-s
Subject(s) - wurtzite crystal structure , exciton , condensed matter physics , diamagnetism , zeeman effect , photoluminescence , materials science , semiconductor , magnetic semiconductor , biexciton , hexagonal crystal system , magnetic field , physics , chemistry , optoelectronics , ferromagnetism , crystallography , quantum mechanics
Results of theoretical and experimental magneto‐optical studies of free excitons in wurtzite GaN are presented. The direct photoluminescence from free exciton states of high‐quality GaN epilayers was studied by polarization‐dependent magneto‐optical measurements in magnetic fields up to 15 T. Zeeman splittings and diamagnetic shifts of the n = 1 and n = 2 states of the A exciton were observed for magnetic fields parallel and perpendicular to the hexagonal axis. The experimental data are described by a theory of the exciton energy structure in hexagonal semiconductors with wurtzite symmetry in the framework of the quasi‐cubic approximation.