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Photoluminescence Investigations of AlGaN on GaN Epitaxial Films
Author(s) -
Meyer B.K.,
Steude G.,
Göldner A.,
Hoffmann A.,
Amano H.,
Akasaki I.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<187::aid-pssb187>3.0.co;2-8
Subject(s) - photoluminescence , epitaxy , laser linewidth , materials science , exciton , alloy , luminescence , optoelectronics , condensed matter physics , optics , nanotechnology , laser , metallurgy , physics , layer (electronics)
AlGaN on GaN epitaxial films with Al contents between 6% and 76% were investigated by stationary photoluminescence experiments which allows to determine the dependence of the energy gap on alloy composition. The observed increase of the luminescence linewidth as a function of the Al molar fraction can be explained by alloy broadening. The localization energy of the bound exciton increases considerably and reaches a value of 53 meV for 61% Al. It could imply that the donor binding energy would markedly deviate from its effective mass value, an unexpected result if the residual donor is Si.