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Influence of UV Light‐Assisted Annealing on Optical Properties of InGaN/GaN Heterostructures Grown by MOVPE
Author(s) -
Marko I.P.,
Lutsenko E.V.,
Pavlovskii V.N.,
Yablonskii G.P.,
Schön O.,
Protzmann H.,
Lünenbürger M.,
Heuken M.,
Schineller B.,
Heime K.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<175::aid-pssb175>3.0.co;2-k
Subject(s) - heterojunction , annealing (glass) , metalorganic vapour phase epitaxy , materials science , photoluminescence , optoelectronics , quantum well , cladding (metalworking) , laser , double heterostructure , ultraviolet , semiconductor laser theory , epitaxy , optics , semiconductor , layer (electronics) , nanotechnology , composite material , physics
The influence of ultraviolet light‐assisted annealing on the optical properties of InGaN/GaN single quantum wells (SQW), and thick single and double heterostructures (SH, DH) was investigated. It was shown that annealing promotes an increase of the photoluminescence (PL) intensity from the active layers of the SQW and double heterostructures by as much as one order of magnitude. This is effected mainly by a diminishing of the defect concentration and a smoothing of the potential fluctuations in the upper cladding layer. The operating temperature of the DH lasers was lifted from 220 up to 300 K after annealing. Using nitrogen laser irradiation during annealing led both to a PL efficiency increase and to a phase separation in the SH with a thick active layer.