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Study of Phase‐Separated InGaN Grown by Metalorganic Vapor Phase Epitaxy
Author(s) -
Li P.,
Chua S.J.,
Li G.,
Wang W.,
Wang X.C.,
Guo Y.P.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<145::aid-pssb145>3.0.co;2-w
Subject(s) - metalorganic vapour phase epitaxy , photoluminescence , epitaxy , materials science , luminescence , mesoscopic physics , quantum dot , phase (matter) , vapor phase , optoelectronics , atomic force microscopy , analytical chemistry (journal) , nanotechnology , condensed matter physics , chemistry , layer (electronics) , physics , organic chemistry , chromatography , thermodynamics
InGaN thin films were grown by low‐pressure metalorganic vapor phase epitaxy (MOVPE) and characterized by photoluminescence (PL) with variable excitation intensity and temperature. The surface morphology was investigated by Atomic Force Microscopy (AFM). All the samples show dominant peaks at around 2.9 eV and extra peaks or shoulders at 2.8 eV at 6 K. We concluded that the low energy peak is due to the localized near‐band edge transition from the phase‐separated InGaN mesoscopic structure with high In content. The strong luminescence of the low energy peak at room temperature is due to the quantum confinement enhancement in the form of nanostructures or quantum dots. AFM images showed that phase‐separated InGaN samples have inverted hexagonal pits which are formed by In segregation on (101_1) surfaces.