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Intrinsic Infrared Luminescence from InGaN Epilayers
Author(s) -
O'Donnell K.P.,
Martin R.W.,
Pereira S.,
Bangura A.,
White M.E.,
van der Stricht W.,
Jacobs K.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<141::aid-pssb141>3.0.co;2-b
Subject(s) - indium , optoelectronics , materials science , indium nitride , photoluminescence , indium gallium nitride , luminescence , light emitting diode , gallium nitride , nitride , infrared , wavelength , semiconductor , wide bandgap semiconductor , stokes shift , band gap , gallium , optics , nanotechnology , physics , layer (electronics) , metallurgy
The extension of nitride technology to longer wavelengths is a considerable technical challenge that poses fundamental questions about the origin of luminescence from semiconductor solid solutions. Among the commercial suppliers of nitride semiconductor devices, Nichia Company alone has fabricated amber InGaN LEDs which peak at 594 nm, while some of the present authors have reported 650 nm, red, photoluminescence (PL) from an epilayer of ‘high’ indium content. Here we show further that indium gallium nitride is capable of emitting not only red but also infrared radiation in a band‐to‐band process. By using a Stokes' shift model we predict a limiting peak, for intrinsic InGaN emission, near a wavelength of one micron, which is 0.7 eV lower in energy than the band gap of pure indium nitride. In confirmation of this prediction, we have measured intrinsic luminescence with peak wavelengths up to 950 nm in a selected InGaN epilayer.