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Effect of Nitrogen‐Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys
Author(s) -
Skierbiszewski C.,
Perlin P.,
Wisniewski P.,
Suski T.,
Walukiewicz W.,
Shan W.,
Ager J.W.,
Haller E.E.,
Geisz J.F.,
Friedman D.J.,
Olson J.M.,
Kurtz S.R.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<135::aid-pssb135>3.0.co;2-#
Subject(s) - conduction band , nitrogen , materials science , electron , thermal conduction , condensed matter physics , chemistry , physics , composite material , nuclear physics , organic chemistry
We report pressure studies of conductivity, photoconductivity and Hall effect in Si doped GaAs 0.986 N 0.014 . We observed that pressure causes an unusually large reduction of the electron mobility in this compound (factor of 2.5 in the pressure range 0 to 2 GPa). We also measured the pressure coefficient of the energy gap and we found it, in agreement with previous reports, to be reduced by almost 40% compared to that of GaAs. These results can be successfully explained by a recently proposed, phenomenological model based on the concept of an anticrossing interaction between localized N‐related states (resonant with the conduction band) and conduction band states. This model explains well the reduction of the pressure coefficient of the bandgap and predicts an enhancement of the effective mass of GaAs 1— x N x . The decrease of electron mobility observed in the present study is in agreement with this latter prediction.