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k · P Model of Ordered GaN x As 1—x
Author(s) -
O'Reilly E.P.,
Lindsay A.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<131::aid-pssb131>3.0.co;2-f
Subject(s) - quasi fermi level , hamiltonian (control theory) , conduction band , condensed matter physics , semimetal , electronic band structure , thermal conduction , valence band , tight binding , valence (chemistry) , materials science , dispersion (optics) , heterojunction , band gap , physics , chemistry , electronic structure , optics , quantum mechanics , mathematics , electron , mathematical optimization
We present a three‐band k · P Hamiltonian to describe the conduction band dispersion of ordered GaN x As 1— x crystals for low N concentrations ( x ≲ 0.05). The model includes interactions between the highest valence band, lowest conduction band and a higher‐lying band formed by N resonant states. The k · P conduction band dispersion is in excellent agreement with full tight‐binding calculations, and can be used as a basis for a wide range of studies of Ga 1— y In y N x As 1— x heterostructures and devices.