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GaN on Si(111): From Growth Optimization to Optical Properties of Quantum Well Structures
Author(s) -
Semond F.,
Damilano B.,
Vézian S.,
Grandjean N.,
Leroux M.,
Massies J.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<101::aid-pssb101>3.0.co;2-r
Subject(s) - photoluminescence , molecular beam epitaxy , materials science , optoelectronics , full width at half maximum , quantum well , diffraction , transmission electron microscopy , spectral line , reflection (computer programming) , epitaxy , layer (electronics) , optics , laser , nanotechnology , physics , astronomy , computer science , programming language
In this paper, we report on the growth of GaN films and AlGaN/GaN multiple quantum wells (MQWs) on Si(111) substrates by molecular beam epitaxy using ammonia as nitrogen source. A smooth layer‐by‐layer two‐dimensional growth mode allows to obtain reflection high‐energy electron diffraction intensity oscillations during GaN, AlN and AlGaN growth. Low temperature photoluminescence (PL) spectra of thick nearly relaxed GaN films are dominated by an intense excitonic emission at 3.471 eV having a full width at half maximum of 5 meV. On the other hand, the PL spectra of thick strained GaN films exhibit a broad band edge emission at 3.455 eV having a full width at half maximum of 15 meV. As revealed by transmission electron microscopy, AlGaN/GaN MQW structures with sharp interfaces are achieved on Si(111) substrates and each QW exhibits a clearly resolved PL emission peak.