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Electrical Properties of the Cu 2 FeGeSe 4 Compound
Author(s) -
Sánchez Porras G.,
Quintero M.,
Barrios R.,
Gonzalez J.,
TovarSánchez Porras R.,
Ruiz J.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199910)215:2<1067::aid-pssb1067>3.0.co;2-k
Subject(s) - materials science , compound semiconductor , valence (chemistry) , activation energy , impurity , electrical resistivity and conductivity , valence band , semiconductor , crystallite , effective mass (spring–mass system) , condensed matter physics , atmospheric temperature range , ionization energy , range (aeronautics) , analytical chemistry (journal) , ionization , chemistry , band gap , nanotechnology , optoelectronics , thermodynamics , physics , ion , metallurgy , composite material , epitaxy , organic chemistry , layer (electronics) , quantum mechanics , chromatography
The electrical transport properties of a polycrystalline sample of Cu 2 FeGeSe 4 magnetic semiconductor compound are studied in the temperature range between 100 and 300 K. From the analysis of the electrical data, the values of the activation energy E A , the density of states effective mass of the holes m p , the concentration of the ionized impurities N I , the sound velocity v and the valence‐band deformation potential E ac for the compound are estimated.