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Formation of Iodide Thin Films in Non‐Equilibrium Growth
Author(s) -
Zhang Jizhong,
Ye Xiaoyan,
Yang Xiaodong
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199910)215:2<1025::aid-pssb1025>3.0.co;2-3
Subject(s) - fractal , materials science , scanning electron microscope , thin film , silicon , crystal growth , nanotechnology , chemical physics , crystallography , chemical engineering , chemistry , metallurgy , composite material , engineering , mathematical analysis , mathematics
The morphologies of the deposits SnI 2 and CdI 2 , which formed on the surface of a silicon crystal during vapor–solid transition, were studied. The SnI 2 fractal structures and the CdI 2 self‐organizing structures were observed by scanning electron microscopy. It is most significant that the SnI 2 fractal structures were composed of nanograins grown at the advancing front of SnI 2 crystal accumulation, and showed a transient from equilibrium to non‐equilibrium growth. The transient occurred as the cooling rate was increased up to 1000 K/min. The CdI 2 self‐organizing sunflower‐like structures were composed of CdI 2 nanocrystals, and indicated an anomalous growth mechanism. The experimental results suggest that the iodide thin films can give rise to fractal structures or self‐organizing structures resulting from non‐equilibrium growth processes.