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Polar Optical Oscillation Modes in a Semiconductor Heterostructure
Author(s) -
Comas F.,
Castro F.,
Papa A. R. R.,
Gondar J. L.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199910)215:2<1013::aid-pssb1013>3.0.co;2-h
Subject(s) - heterojunction , semiconductor , oscillation (cell signaling) , limit (mathematics) , polar , dispersion relation , semiconductor nanostructures , nanostructure , coupling (piping) , physics , dispersion (optics) , condensed matter physics , amplitude , materials science , optoelectronics , quantum mechanics , mathematical analysis , mathematics , chemistry , biochemistry , metallurgy
A recently proposed phenomenological theory for polar optical oscillations in semiconductor nanostructures is applied to the case of a system modeled as follows: a layer of a given material (e.g., GaAs) has one of its interfaces free to oscillate mechanically (e.g., GaAs–air) while the other one is the interface with a semi‐infinite semiconductor (e.g., GaAs–AlAs). To a certain extent this model nanostructure could be addressed to the single heterostructure case. By solving the system of four coupled differential equations involved in the theory, analytical expressions for mode amplitudes and dispersion relations are obtained. The present treatment, valid in the long wavelength limit, provides a full account of the electromechanical coupling of the oscillations and was applied succesfully to other types of structures. A detailed discussion of the obtained results is made.