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Cross Section Potentiometry of Doped Silicon Structures Using SFM
Author(s) -
Breymesser A.,
Schlosser V.,
Summhammer J.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<855::aid-pssb855>3.0.co;2-x
Subject(s) - doping , silicon , dopant , materials science , diode , optoelectronics , work function , cross section (physics) , work (physics) , nanotechnology , mechanical engineering , physics , engineering , layer (electronics) , quantum mechanics
The surface work function measurement of doped silicon structures by using an adapted commercially available SFM (scanning force microscope) is presented. The investigation of a well defined ion‐implanted sample for testing the measurement method is described. Deviations of the measured work function values from the theoretical expectations are discussed and interpreted. Furthermore the cross‐sectional measurement of a microcrystalline silicon p–i–n diode structure for photovoltaic applications is presented. Contrast can be achieved due to different dopants and the built‐in electric drift field between p‐ and n‐doped regions. The potential to judge the quality of diode structures and to suggest improvements for the deposition process is stated.