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X‐Ray Interface Characterization of Buried InAs Layers on GaAs (001)
Author(s) -
Zhang K.,
Foede A.,
Schmidt Th.,
Sonntag P.,
Heyn Ch.,
Materlik G.,
Hansen W.,
Falta J.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<791::aid-pssb791>3.0.co;2-0
Subject(s) - materials science , molecular beam epitaxy , synchrotron radiation , surface finish , characterization (materials science) , superlattice , layer (electronics) , x ray reflectivity , crystal (programming language) , x ray , optics , stoichiometry , thin film , epitaxy , rod , crystallography , optoelectronics , chemistry , nanotechnology , composite material , physics , medicine , organic chemistry , alternative medicine , pathology , computer science , programming language
Ultra thin buried InAs layers on GaAs (001) crystals prepared by molecular beam epitaxy are structurally characterized using synchrotron radiation. Grazing incidence X‐ray reflectivity and crystal truncation rods were utilized to determine the average layer thickness, interface roughness, and the stoichiometry of the layers. From X‐ray standing wave experiments the In lattice site and vertical distribution are determined. We discuss our results in view of the structural transition of the layer system with In deposition from 1.0 to 2.1 ML.