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Angle Resolved Photoemission Spectroscopy of GaN (101‐0): Experiment and Theory
Author(s) -
Wichert J.,
Weber R.,
Kipp L.,
Skibowski M.,
Strasser T.,
Starrost F.,
Solterbeck C.,
Schattke W.,
Suski T.,
Grzegory I.,
Porowski S.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<751::aid-pssb751>3.0.co;2-g
Subject(s) - synchrotron radiation , excited state , spectral line , materials science , photoemission spectroscopy , inverse photoemission spectroscopy , atomic physics , spectroscopy , x ray photoelectron spectroscopy , angle resolved photoemission spectroscopy , surface states , valence (chemistry) , valence band , surface (topology) , molecular physics , chemistry , optics , optoelectronics , band gap , nuclear magnetic resonance , physics , geometry , quantum mechanics , mathematics , organic chemistry , astronomy
We present synchrotron radiation excited photoemission spectra in off‐normal emission from GaN (101‐0) surfaces. The samples of GaN single crystals grown by high‐pressure high‐temperature synthesis were cleaved under ultra high vacuum conditions. The experimental results were compared with calculated spectra within the one‐step model. We could identify emissions from surface states and resonances near the upper and lower valence band edge. The detected surface states confirm the assumed surface geometry.