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Atomic Surface Structure of MOVPE‐Grown InP(001)
Author(s) -
Vogt P.,
Frisch A. M.,
Hannappel Th.,
Visbeck S.,
Willig F.,
Jung Ch.,
Esser N.,
Braun W.,
Richter W.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<737::aid-pssb737>3.0.co;2-0
Subject(s) - metalorganic vapour phase epitaxy , scanning tunneling microscope , monolayer , electron diffraction , diffraction , crystallography , electron counting , materials science , spectroscopy , layer (electronics) , surface structure , chemistry , optics , electron , epitaxy , physics , nanotechnology , quantum mechanics
In this study soft X‐ray photoemission spectroscopy (SXPS) and scanning tunneling microscopy (STM) were used to investigate the microscopic structure of the P‐rich so‐called (2×1) reconstruction of InP(001). The samples were homoepitaxially grown in a commercial MOVPE reactor, transferred to ultra high vacuum (UHV), and then transported to separate UHV analysis chambers. Electron diffraction patterns of the samples taken after transfer show a (2×1)/(2×2) periodicity with streaks in the [1‐10] direction. STM images display rows along the [110] direction showing a twofold periodicity. Consistent with SXPS spectra of the P2p and In4d core levels the structure can be explained by a fractional monolayer of P‐dimers adsorbed on a complete second layer of P. The P‐dimers are arranged in local (2×2)/c(2×2)/c(4×2) structures showing a lack of long‐range ordering.