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Ellipsometric Investigations on SiO 2 /Si: The Interface Response
Author(s) -
Jungk G.,
Jungk Ch.,
Grabolla T.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<731::aid-pssb731>3.0.co;2-o
Subject(s) - ellipsometry , hydrofluoric acid , wavelength , silicon , materials science , oxidation process , analytical chemistry (journal) , interface (matter) , range (aeronautics) , photon , chemistry , thin film , optics , optoelectronics , chemical engineering , nanotechnology , adsorption , organic chemistry , metallurgy , physics , gibbs isotherm , engineering , composite material
Differently prepared SiO 2 –Si samples have been investigated by spectroscopic ellipsometry using photons with energies between 2 and 4 eV. The calculated interface response exhibits characteristic features depending on the oxidation process. Comparison is performed for two types of dry and one water vapour oxidation as well as for samples with and without the preoxidation hydrofluoric acid treatment (hydrogenation). The most pronounced effects occur in the spectral range of the E 1 ‐transition of Si. Relations between the interface response and typical oxidation processes are discussed. The interpretation of the experimental data for ultrathin SiO 2 films (thickness h below 5 nm) demonstrates that h can become a questionable number and even wavelength dependent.