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Ce Electronic Structure Studied by Resonant Electron Spectroscopies
Author(s) -
Le Fèvre P.,
Magnan H.,
Hricovini K.,
Chandesris D.,
Vogel J.,
Formoso V.,
Eickhoff T.,
Drube W.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<617::aid-pssb617>3.0.co;2-c
Subject(s) - atomic physics , absorption edge , excited state , auger , inverse photoemission spectroscopy , electronic structure , absorption (acoustics) , raman spectroscopy , photon energy , resonance (particle physics) , electron , chemistry , spectral line , materials science , photon , angle resolved photoemission spectroscopy , band gap , physics , optics , computational chemistry , optoelectronics , quantum mechanics , astronomy , composite material
In Ce compounds, strong resonant effects are observed in high energy photoemission spectra, both at the Ce M 4, 5 and Ce L 2, 3 absorption edges for the Ce 4d and Ce 3d photoemission peaks, respectively. In the mixed valent compounds, for the photoemission peaks corresponding to mainly 4f 0 , 4f 1 and 4f 2 character of the final state, the resonance occurs at different photon energies making it possible to unravel the X‐ray absorption profiles. Moreover resonant L 2, 3 M 4, 5 N 4, 5 Raman Auger lines are observed up to 10 eV above the L 2 and L 3 absorption edge jumps, showing the strong localization of the core excited state. These results help to understand the validity and the limits of atomic models for the description of the electronic and magnetic properties of these systems.