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Electronic Raman Scattering in Y 1—x Ca x Ba 2 Cu 3 O 7—δ Single Crystals
Author(s) -
Martin A. A.,
Hadjiev V. G.,
Bernhard C.,
Ruf T.,
Cardona M.,
Wolf T.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<477::aid-pssb477>3.0.co;2-x
Subject(s) - cuprate , raman scattering , superconductivity , condensed matter physics , raman spectroscopy , doping , materials science , scattering , power law , physics , optics , statistics , mathematics
Abstract Polarized Raman scattering measurements have been performed on single crystals of the high temperature superconductor Y 0.8 Ca 0.2 Ba 2 Cu 3 O 7—δ as a function of carrier concentration. For strongly overdoped crystals we found that positions of the pair‐breaking peaks decrease with increasing overdoping and, unlike in optimally doped crystals, almost coincide. In both doping states the Raman response follows a linear power law at low frequencies for the A 1g channel and a αω + βω 3 dependence for the B 1g one. Our results agree with similar data on overdoped Bi‐2212 and Tl‐2201, and should therefore represent a universal property of the overdoped cuprate high‐ T c superconductors. For the strongly underdoped sample, no superconductivity‐induced change in the electronic continuum has been observed.