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Resonant Raman Scattering in Asymmetric Semiconductor Quantum Disks
Author(s) -
TralleroGiner C.,
MenéndezProupin E.,
Ulloa S. E.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<459::aid-pssb459>3.0.co;2-x
Subject(s) - raman scattering , exciton , phonon , x ray raman scattering , condensed matter physics , anisotropy , hamiltonian (control theory) , scattering , quantum dot , raman spectroscopy , polarizability , physics , molecular physics , quantum mechanics , mathematical optimization , mathematics , molecule
We report a theoretical study of the first‐order resonant Raman scattering by optical phonons in self‐assembled quantum dots (SAQDs). We consider the SAQD as a cylindrical disk with elliptical cross section to simulate shape and confinement anisotropies obtained during the SAQD growth. The lateral confinement anisotropy is modelled by harmonic potentials with two different frequencies. In an envelope function Hamiltonian approach and using matrix diagonalization techniques, the exciton wave function and energy states are calculated as function of SAQD parameters. Raman scattering polarizability is obtained for a Frihlich coupling between exciton and confined‐phonons. We analyze how the Raman scattering technique could give information on confinement anisotropy effects and SAQDs geometry. Here, characteristic results for SAQDs of CdSe dots in ZnSe are presented.