Premium
Raman Scattering by Optical Phonons in a Highly Strained InAs/GaAs Monolayer
Author(s) -
Reich S.,
Goñi A. R.,
Thomsen C.,
Heinrichsdorff F.,
Krost A.,
Bimberg D.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<419::aid-pssb419>3.0.co;2-c
Subject(s) - monolayer , phonon , raman scattering , raman spectroscopy , materials science , scattering , condensed matter physics , spectroscopy , x ray raman scattering , molecular physics , optoelectronics , chemistry , optics , physics , nanotechnology , quantum mechanics
Using Raman spectroscopy we studied the InAs‐related vibrations of a single highly strained InAs monolayer embedded in bulk‐like GaAs. Experiments were performed in right‐angle and forward‐scattering configuration with the scattered light propagating along the monolayer plane. The energies of the InAs modes are strongly blue‐shifted compared to the bulk values. We estimate the phonon deformation potentials of InAs and obtained the strain in the monolayer to be —5%.