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Resonant Raman Scattering in Semiconductor Microcavities
Author(s) -
Fainstein A.,
Jusserand B.,
André R.,
ThierryMieg V.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<403::aid-pssb403>3.0.co;2-3
Subject(s) - raman scattering , scattering , polariton , semiconductor , planar , photonics , exciton , optoelectronics , angle of incidence (optics) , optics , physics , laser , raman spectroscopy , materials science , condensed matter physics , computer graphics (images) , computer science
We present first‐order resonant Raman scattering results on III–V and II–VI semiconductor QW embedded planar microcavities, as a function of both laser incidence angle and cavity–exciton detuning. We show that the results can be well described by a simple expression for the scattering efficiency, σ pol ∝ ( S pi S xi ) ( S ps S xs ), where S p and S x are the photonic and excitonic strength, respectively, of the incoming and scattered cavity polaritons. We discuss the assumptions leading to this expression in terms of existing theories of polariton mediated scattering in bulk, adapted to optically confined structures.