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Spatially Resolved Optical Characterization of AlGaAs Layers Grown on Patterned Substrates
Author(s) -
Bitzer K.,
Keppeler D.,
Limmer W.,
Sauer R.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<387::aid-pssb387>3.0.co;2-x
Subject(s) - photoluminescence , materials science , facet (psychology) , quantum well , spectroscopy , doping , raman spectroscopy , optoelectronics , layer (electronics) , optics , laser , nanotechnology , physics , psychology , social psychology , personality , quantum mechanics , big five personality traits
We have applied micro‐photoluminescence (PL) spectroscopy to scan the Al concentration and the well width of an undoped GaAs/AlGaAs single quantum well (QW) and micro‐Raman spectroscopy to scan the carrier concentration of a Si‐doped AlGaAs layer along (100)/(111)A/(100) facet transitions. The QW and the doped layer were grown by MBE on patterned GaAs substrates exhibiting (100) ridges and (100) grooves separated by 5 μm wide (111)A facets. The width of the GaAs QW, obtained from the spectral position of the QW PL, decreases from 10 nm on the (100) planes to 8 nm on the (111)A facet. The Al concentration, derived from the spectral position of the AlGaAs‐barrier PL, varies between 23.5 and 29.5% along the facet transition. The type and concentration of charge carriers, deduced from the spectral position and line shape of the coupled plasmon–LO‐phonon modes varies from n = 1.8 × 10 18 cm —3 on the (100) planes to n < 4 × 10 17 cm —3 or p‐type on the (111)A facet.