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Resonant Light Scattering as a Probe of Si δ‐Layer in Al x Ga 1—x As/GaAs Heterojunctions
Author(s) -
Katayama S.,
Koyano M.,
Yamada S.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<359::aid-pssb359>3.0.co;2-0
Subject(s) - heterojunction , x ray absorption spectroscopy , materials science , optoelectronics , layer (electronics) , scattering , optics , nanotechnology , physics , absorption spectroscopy
We report the observation of a significant resonance enhancement of LO phonon light scattering spectra from AlGaAs layers in Si δ‐doped Al x Ga 1— x As/GaAs ( x = 0.29) heterojunctions at low temperatures. The temperature dependence of both inelastic light scattering and interband photoluminescence is studied to probe the behavior of the photoexcited electrons and holes in the δ‐doped sample and undoped Al 0.29 Ga 0.71 As. The asymmetric line shape indicates a Fano‐type interference between the LO phonon lines and the broad spectrum from electronic light scattering by quasi‐two‐dimensional electrons formed in a Si δ‐layer.