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Photoluminescence Study of the 2D–3D Growth Mode Changeover for Different Ge/Si Island Phases
Author(s) -
Schmidt O. G.,
Lange C.,
Eberl K.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<319::aid-pssb319>3.0.co;2-g
Subject(s) - photoluminescence , wetting layer , molecular beam epitaxy , materials science , wetting , island growth , condensed matter physics , layer (electronics) , epitaxy , optoelectronics , nanotechnology , physics , composite material
We report on a phase transition of Ge/Si islands grown by molecular beam epitaxy as a function of growth temperature T s and its impact on the photoluminescence properties. At T s = 600 °C islands exhibit large ‘dome‐like’ sizes and small areal densities. Reducing the growth temperature by a mere 20 °C reveals a different island phase which consists of much smaller pyramidal‐like islands with an increased sheet density. Photoluminescence experiments show that for T s = 600 °C both the wetting layer and the island related energy transitions are resolved. For the lower growth temperature the wetting layer related photoluminescence vanishes during the course of island formation.