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Control of Electronic States in Epitaxially Synthesized Quantum Dot and Wire Structures and Their Potentials as New Electronics and Photonics Materials
Author(s) -
Sakaki H.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<291::aid-pssb291>3.0.co;2-k
Subject(s) - quantum dot , epitaxy , quantum wire , photonics , electronics , materials science , optoelectronics , nanotechnology , ridge , quantum , condensed matter physics , physics , electrical engineering , quantum mechanics , engineering , layer (electronics) , paleontology , biology
Recent advances in the epitaxial synthesis of 10 nm‐scale quantum dot (QD) and wire (QWR) structures will be described. In particular, features of one‐dimensional electronic states in various QWRs formed along the exposed edge of quantum wells, the sharp corner (ridge) of crystal facets and the atomic steps on tilted substrates are discussed. The manipulations of zero‐dimensional states in self‐organized islands and other novel QDs are also discussed. Prospects of these wires and dots as new electronic and photonic materials are examined.