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Pressure Tuning of Competing Charged and Neutral Exciton States in Quasi‐2D Semiconductor Structures
Author(s) -
Tischler J. G.,
Weinstein B. A.,
McCombe B. D.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<263::aid-pssb263>3.0.co;2-o
Subject(s) - exciton , excitation , photoluminescence , semiconductor , electron , crossover , quantum well , kinetic energy , doping , atomic physics , modulation (music) , condensed matter physics , materials science , power (physics) , physics , optoelectronics , optics , quantum mechanics , laser , artificial intelligence , computer science , acoustics
Photoluminescence studies of neutral and charged excitons in modulation doped GaAs/Al 0.3 Ga 0.7 As quantum wells are performed as functions of applied pressure, temperature, and excitation power and frequency. Varying both pressure and incident power allows sensitive selection of the different exciton transitions. The Γ–X crossover in the barriers at ≈7 to 9 kbar accelerates photo‐pumping of electrons to the barriers. A semi‐empirical kinetic model is able to account for the power and pressure dependencies of this process.