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Electron and Hole Spin Dynamics in Magnetic Semiconductors
Author(s) -
Koopmans B.,
van Kampen M.,
de Jonge W. J. M.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<217::aid-pssb217>3.0.co;2-s
Subject(s) - condensed matter physics , spin (aerodynamics) , electron , magnetic semiconductor , spin polarization , relaxation (psychology) , semiconductor , magnetization , spin flip , spinplasmonics , femtosecond , physics , materials science , scattering , spin hall effect , magnetic field , ferromagnetism , laser , optics , optoelectronics , quantum mechanics , thermodynamics , psychology , social psychology
We studied the electron and hole spin dynamics in magnetic semiconductor quantum wells on pico‐ and femtosecond time scales by means of time‐resolved magnetization modulation spectroscopy. Spin relaxation times of ∼10 ps (electrons) and ∼100 to 200 fs (holes) are found at room temperature for 15/15 monolayer CdTe/Cd 0.88 Mn 0.12 Te structures. Monitoring the decay of an optically induced spin density as a function of the Mn concentration, we conclude that the loss of the electron spin is related to spin‐flip scattering via exchange with the large magnetic moments at the Mn sites.