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Influence of Stacking Disorder on the Raman Spectrum of 3C‐SiC
Author(s) -
Rohmfeld S.,
Hundhausen M.,
Ley L.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<115::aid-pssb115>3.0.co;2-3
Subject(s) - raman spectroscopy , stacking , materials science , laser linewidth , annealing (glass) , spectral line , condensed matter physics , molecular physics , laser , single crystal , crystal (programming language) , nuclear magnetic resonance , optics , chemistry , crystallography , physics , programming language , astronomy , computer science , composite material
Abstract We measured Raman spectra of as‐deposited and laser‐annealed polycrystalline 3C‐SiC layers. Compared to single crystal 3C‐SiC the Raman lines are considerably broader and an additional signal at frequencies corresponding to a high density‐of‐states is found. We discuss the influence of stacking disorder on the Raman spectrum by comparing our results with computer simulated Raman intensity profiles of one‐dimensionally disordered SiC structures. The broadening of the linewidth and the disorder‐induced peak shift, as well as the density‐of‐states feature can be explained with stacking disorder. After laser annealing above 1900 K the Raman lines narrow irreversibly and the density‐of‐states feature disappears. We ascribe both observations to a reduction of stacking disorder.