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Deep Ultraviolet Raman Scattering for the Monitoring of High‐Temperature Processing of AlGaN
Author(s) -
Kuball M.,
Demangeot F.,
Frandon J.,
Renucci M. A.,
Batchelder D. N.,
Briot O.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199909)215:1<105::aid-pssb105>3.0.co;2-7
Subject(s) - raman scattering , raman spectroscopy , ultraviolet , materials science , x ray raman scattering , annealing (glass) , scattering , optoelectronics , excitation , aluminium , analytical chemistry (journal) , optics , chemistry , physics , composite material , chromatography , quantum mechanics
Deep ultraviolet micro‐Raman scattering was employed to monitor high‐temperature processing of AlGaN films under resonant excitation conditions, giving rise to enhanced first and second‐order Raman scattering. High‐temperature treatments at 1100 °C result in changes in the second‐order Raman scattering signal and monitor the emergence of microscopic defects during the high‐temperature processing. The second‐order Raman spectrum was analyzed to gain insight into the AlGaN phonon density of states. For annealing temperatures higher than 1150 °C, the Al 0.72 Ga 0.28 N film decomposes: a low‐ and a high‐aluminum composition Al x Ga 1— x N phase emerge. At 1100 °C, prior to the Al 0.72 Ga 0.28 N decomposition, deep UV Raman scattering detects the built‐up of strain in the Al 0.72 Ga 0.28 N film.