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Electrical Resistivity Anisotropy of Gd at High Pressure
Author(s) -
Balog P. S.,
Secco R. A.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199908)214:2<357::aid-pssb357>3.0.co;2-9
Subject(s) - electrical resistivity and conductivity , anisotropy , condensed matter physics , materials science , phase (matter) , compressibility , crystallite , atmospheric temperature range , nuclear magnetic resonance , chemistry , thermodynamics , metallurgy , physics , optics , organic chemistry , quantum mechanics
Measurements of electrical resistivity of single‐ and polycrystalline Gd were performed in a large volume cubic anvil press in the h.c.p. phase region at room temperature up to 16 kbar. The anisotropy of electrical resistivity of h.c.p. Gd, observed at room pressure and temperature, is maintained at elevated pressure for the entire h.c.p. range. When the low pressure dependence of anisotropy is extrapolated to higher pressure beyond the stability region of the h.c.p. phase, the anisotropy disappears at approximately 205 kbar. The pressure‐induced decrease in anisotropy is discussed in terms of related anisotropies of compressibility and the spin‐disorder component of electrical resistivity.