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Impurity States in Narrow Bandgap Semiconductors in a High Magnetic Field
Author(s) -
Avetisyan A. A.,
Djotyan A. P.,
Kazaryan E. M.,
Sarkisyan H. A.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199907)214:1<91::aid-pssb91>3.0.co;2-d
Subject(s) - condensed matter physics , impurity , band gap , magnetic field , semiconductor , hydrogen atom , atom (system on chip) , ground state , dispersion (optics) , binding energy , physics , magnetic impurity , atomic physics , materials science , quantum mechanics , computer science , group (periodic table) , embedded system
Abstract The energy levels of a relativistic hydrogen atom in a high magnetic field have been studied. The account of relativity causes a further monotonous increase of the binding energy of the ground state with the growth of magnetic field, which is more rapid than in the nonrelativistic case. The results are generalised for donor impurity states in narrow bandgap semiconductors with nonparabolic dispersion law.