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The Influence of Fluctuations on Shallow Impurity Line Broadening and Quality Diagnose of n‐GaAs
Author(s) -
Alekperov O. Z.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199907)214:1<69::aid-pssb69>3.0.co;2-8
Subject(s) - impurity , photoelectric effect , spectral line , homogeneous broadening , line (geometry) , condensed matter physics , materials science , quality (philosophy) , compensation (psychology) , homogeneous , chemistry , physics , doppler broadening , optoelectronics , thermodynamics , psychology , organic chemistry , geometry , mathematics , quantum mechanics , astronomy , psychoanalysis
It is established experimentally that the low temperature photoelectric spectra line width of shallow impurities does not depend only on charged impurity concentration N I = 2 N A and degree of sample compensation K = N A / N D , as it was believed earlier. To a great extent it depends on the impurity distribution inhomogeneity also. For samples with homogeneous and inhomogeneous distribution of impurities the line width dependences on external electric fields, smaller than the breakdown one, are different. This broadening mechanism allows to compare the quality of samples with nearly equal impurity concentrations.