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Mobility of Two‐Dimensional Electron Gas in GaAs–AlGaAs Heterojunctions
Author(s) -
Wu HangSheng,
Weng MingQi
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199907)214:1<107::aid-pssb107>3.0.co;2-2
Subject(s) - heterojunction , fermi gas , condensed matter physics , phonon , electron , computation , distribution function , function (biology) , electron mobility , physics , materials science , quantum mechanics , mathematics , algorithm , evolutionary biology , biology
The computation of the mobility of a two‐dimensional electron gas in GaAs–AlGaAs heterojunctions carried out by Lei et al. is revised by using a new expression for the distribution function instead of the displaced Fermi function. And also the bare phonon frequency in the theory of Lei et al. is replaced by the renormalized phonon frequency. Our result shows that the agreement between theory and experiment is greatly improved by these revisions.