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Interatomic Force Constant of A II B IV C V 2 and A I B III C VI 2 Semiconductors
Author(s) -
Kumar V.,
Chandra D.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199903)212:1<37::aid-pssb37>3.0.co;2-w
Subject(s) - constant (computer programming) , semiconductor , fine structure constant , plasmon , electron , force constant , oscillation (cell signaling) , atomic physics , delocalized electron , condensed matter physics , chemistry , physics , quantum mechanics , molecule , computer science , programming language , biochemistry
The interatomic force constant (α) of the A–C and B–C bonds in A II B IV C V 2 and A I B III C VI 2 semiconductors with chalcopyrite structure has been calculated using the plasma oscillation theory of solids. An exponential relation between force constant and plasmon energy α = K 1 exp [— K 2 (ħω p ) —2/3 ] has been obtained. The effect of delocalization of noble metal d‐electrons has been taken into account while calculating the force constant of the A–C bond in A I B III C VI 2 semiconductors. On the basis of the best fit data, another simple equation α = K 3 (ħω p ) K 4has been proposed for the calculation of the force constant from their plasmon energy. The calculated values of force constant from the above two equations have been compared with the values reported by different workers. An excellent agreement has been obtained between them.