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Electronic Properties and Interlayer Coupling in Magnetic Semiconductor Heterostructures
Author(s) -
Wilczyński M.,
Świrkowicz R.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199903)212:1<165::aid-pssb165>3.0.co;2-t
Subject(s) - heterojunction , condensed matter physics , semiconductor , magnetic semiconductor , magnetic moment , coupling (piping) , materials science , tight binding , spin (aerodynamics) , inductive coupling , electronic structure , electronic band structure , physics , optoelectronics , quantum mechanics , metallurgy , thermodynamics
Heterostructures composed of magnetic and nonmagnetic semiconductor layers are investigated within the framework of the tight‐binding model. The band structure and local densities of states (DOS) are calculated. Spin‐dependent modifications are found in DOS of nonmagnetic layers for thin spacers. A coupling between magnetic moments across a nonmagnetic spacer is discussed.