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Photoionization of Impurities in Quantum‐Well Wires
Author(s) -
Sali A.,
Fliyou M.,
Satori H.,
Loumrhari H.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199902)211:2<661::aid-pssb661>3.0.co;2-q
Subject(s) - photoionization , impurity , photon energy , atomic physics , quantum wire , quantum , photon , polarization (electrochemistry) , physics , condensed matter physics , chemistry , quantum mechanics , ionization , ion
The photon energy dependence of the photoionization cross‐section is calculated for a hydrogenic shallow donor impurity located in quantum‐well wires of GaAs, surrounded by Ga 1— x Al x As as a function of the sizes of the wire for both infinite‐ and finite‐well models. The results show that the photoionization cross‐section depends on the polarization axis relative to the wire axis as well as on the quantum wire dimensions and the inhomogeneous confinement potential.