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Photoluminescence Studies on Self‐Organized InAlAs/AlGaAs Quantum Dots under Pressure
Author(s) -
Phillips J. D.,
Bhattacharya P. K.,
Venkateswaran U. D.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<85::aid-pssb85>3.0.co;2-0
Subject(s) - photoluminescence , laser linewidth , quantum dot , condensed matter physics , conduction band , materials science , quenching (fluorescence) , chemistry , optoelectronics , physics , optics , fluorescence , quantum mechanics , electron , laser
The pressure dependence of the low temperature photoluminescence (PL) in self‐organized In 0.5 Al 0.5 As/Al 0.25 Ga 0.75 As quantum dots (QD) has been investigated up to 8 GPa. Interesting features of the QD PL observed in our study are: (i) a decrease in the linewidth up to 1.8 GPa, (ii) no significant shift in the PL energy between 0.8 and 2.2 GPa, (iii) anticrossing behavior in the region of 2.2 to 2.6 GPa, and (iv) complete quenching of PL beyond 2.6 GPa. The observed pressure behavior is explained on the basis of the crossing between Γ and X conduction bands.