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Pressure‐Induced Γ–X Crossover in Self‐Assembled In(Ga)As/GaAs Quantum Dots
Author(s) -
Lyapin S. G.,
Itskevich I. E.,
Trojan I. A.,
Klipstein P. C.,
Polimeni A.,
Eaves L.,
Main P. C.,
Henini M.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<79::aid-pssb79>3.0.co;2-f
Subject(s) - quantum dot , hydrostatic pressure , photoluminescence , crossover , condensed matter physics , electron , materials science , gallium arsenide , physics , nanotechnology , optoelectronics , quantum mechanics , thermodynamics , artificial intelligence , computer science
We report low‐temperature photoluminescence (PL) studies of In(Ga)As/GaAs self‐assembled quantum dots at hydrostatic pressures of up to 9 GPa. Observation of the Γ–X crossover between electron states confined in the dots and X‐valley states in the GaAs matrix allows us to evaluate separately the energies of the electron and hole confined states.