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Pressure Dependence of the Band Gap of 4H‐SiC
Author(s) -
Zeman J.,
Engelbrecht F.,
Wellenhofer G.,
Peppermüller C.,
Helbig R.,
Martinez G.,
Rössler U.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<69::aid-pssb69>3.0.co;2-h
Subject(s) - hydrostatic pressure , pressure coefficient , photoluminescence , materials science , band gap , condensed matter physics , exciton , doping , density functional theory , hydrostatic equilibrium , nitrogen , line (geometry) , thermodynamics , chemistry , physics , computational chemistry , optoelectronics , mathematics , quantum mechanics , geometry
Excitonic photoluminescence in 4H‐SiC unintentionally doped with nitrogen was investigated under hydrostatic pressure up to 5 GPa. The pressure coefficient of Q 0 exciton line was determined to be +2.7 meV/GPa. This value measures the pressure coefficient of the indirect gap of 4H‐SiC. It compares very well with the results of theoretical calculations based on local density functional theory which predicts +2.1 meV/GPa.